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APTGT30H170T3G
Full - Bridge Trench + Field Stop IGBT(R) Power Module
13 14
VCES = 1700V IC = 30A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a phase leg of twice the current capability * RoHS Compliant Max ratings 1700 45 30 70 20 210 60A@1600V Unit V
July, 2006 1-5 APTGT30H170T3G - Rev 1
Q1 18 19
CR1
CR3
Q3 11 10
22 23 Q2
7 8 CR4 Q4
26 27
CR2
4 3
29 15
30
31 R1
32 16
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
A V W
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT30H170T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Test Conditions Min Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 30A Tj = 125C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 30A R G = 18 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 30A R G = 18 Typ 2.0 2.4 5.8 Max 250 2.4 6.4 600 Unit A V V nA
5.2
Dynamic Characteristics
Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Min
Typ 2500 90 100 70 650 80 100 70 750 100 17 15
Max
Unit pF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
Test Conditions VR=1700V IF = 50A VGE = 0V Tj = 25C Tj = 125C TC=80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1700
Typ
Max 250 500
Unit V A A
IF = 50A VR = 900V di/dt =800A/s
50 1.8 1.9 385 490 14 23 6 12
2.2
V ns C mJ
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
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2-5
APTGT30H170T3G - Rev 1
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K
Min
Typ 50 3952
Max
Unit k K
July, 2006
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
APTGT30H170T3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 3500 -40 -40 -40 2.5 Min Typ Max 0.6 0.7 150 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
SP3 Package outline (dimensions in mm)
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com July, 2006
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3-5
APTGT30H170T3G - Rev 1
17 12
28
APTGT30H170T3G
Typical Performance Curve
Output Characteristics (V GE=15V) Output Characteristics 60 50 40 IC (A)
T J=125C VGE =15V
60 50
IC (A)
T J=25C
T J = 125C
VGE =19V
40 30 20 10 0 0 0.5 1 1.5 2 2.5 V CE (V) 3 3.5 4
30
VGE =13V
20 10 0 0 1 2 3 V CE (V) 4 5
VGE =9V
60 50 40
Transfert Characteristics 40
TJ=25C
Energy losses vs Collector Current 35 30 E (mJ) 25 20 15 10 5 0 0 20 40 IC (A) Reverse Bias Safe Operating Area 70 60 80 100
Er VCE = 900V VGE = 15V RG = 18 TJ = 125C Eon
Eoff
IC (A)
30 20 10 0 5 6 7 8 VGE (V) 9
TJ=125C
T J=125C
10
11
Switching Energy Losses vs Gate Resistance 80
VCE = 900V VGE =15V IC = 30A TJ = 125C Eon
60 50 IC (A) 40 30 20 10 0 0
VGE =15V TJ=125C RG=18
60 E (mJ)
40
Eoff
20
Er
0 0 20 40 60 80 100 Gate Resistance (ohms) 120
400
800 VCE (V)
1200
1600
0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.5 0.3 0.1 0.05 0.9
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT
Single Pulse 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
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4-5
APTGT30H170T3G - Rev 1
July, 2006
0.7
APTGT30H170T3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 45 40 35 30 25 20 15 10 5 0 0 10 20 30 IC (A) 40 50 60 0 0 0.5 1 1.5 VF (V) 2 2.5 3
ZCS hard switching ZVS VCE=900V D=50% R G=18 T J=125C T C=75C
Forward Characteristic of diode 100 80 60
TJ=125C TJ=25C
IF (A)
40 20
T J=125C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.9 0.7 0.5 0.3 Single Pulse 0.0001 0.001 0.01 0.1 1 10
Diode
0.1 0.1 0.05 0 0.00001
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT30H170T3G - Rev 1
July, 2006

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